| PART |
Description |
Maker |
| IRFE230 2N6798U |
N-Channel Power MOSFET(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）.8A时，RDS（上）：0.46Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）.8A时，RDS（对）：0.46Ω））
N-Channel N沟道
|
NXP Semiconductors N.V.
TT electronics Semelab Limited
Seme LAB
|
| IRFE9130 |
P-Channel Power MOSFET(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)(P沟道功率MOS场效应管(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)) P沟道功率MOSFET（减振钢板基本：- 100V的，身份证（续） 6.1A，Vdgr 0.345V）性（P沟道功率马鞍山场效应管（减振钢板基本 100V的，身份证（续） 6.1AVdgr 0.345V））
|
Seme LAB
|
| B1821BH075C300N B1821BH075C275N B1821BH038C275N B1 |
Cap Screws Cont
|
Fastenal
|
| SML80H12 SML100H11 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
| SML80H14 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 13.5 A, 800 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):13.5A,Rds(on):0.58Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):13.5A,Rds(on):0.58Ω))
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| NJU26105 |
AGC/eala BASS/T.cont/PEQ/Vol./HPF / QFP32-R1
|
JRC
|
| MC44604 |
High Safety Standby Ladder Mode GreenLine PWM Cont
|
ON Semiconductor
|
| AS3834 AS3834-ZSOT AS3834-ZTQT |
4 channel high-precision LED cont rol ler for 3D-LCD backl ight wi th
|
ams AG
|
| APT13GP120B |
Volts:1200V VF/Vce(ON):3.6V ID(cont):13Amps|Ultrafast IGBT Family 电压200伏室的Vceon）：3.6V的身份证（续）：一三安培|超快IGBT的家
|
Commonwealth Industrial, Corp.
|
| APT5523BFLL APT5523SFLL |
Volts:550V RDS(ON)0.23Ohms ID(cont):24Amps|FREDFETs ( fast body diode) 电压50V的RDS（ON.23Ohms身份证（续）：二十四安培| FREDFETs（快速体二极管）
|
Microsemi, Corp.
|
| 2N4118A SST4119 2N4117A 2N4119A PN4117A PN4118A PN |
N-Channel JFETs
IC FTDI2232L USB/SERIAL 48-LQFP
MOSFET, DUAL PP SO-8MOSFET, DUAL PP SO-8; Transistor type:MOSFET; Transistor polarity:Dual P; Voltage, Vds max:12V; Case style:SO-8; Current, Id cont:4.8A; Current, Idm pulse:-20A; Power, Pd:1.1W; Resistance, Rds on:0.035R; SMD:1;
MOSFET, DUAL PP SO-8MOSFET, DUAL PP SO-8; Transistor type:MOSFET; Transistor polarity:Dual P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:3.6A; Current, Idm pulse:40A; Power, Pd:1.1W; Resistance, Rds on:0.06R; SMD:1;
|
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
|
| ICE3AR0680JZ |
Of f -Line SMPS Cur rent Mode Cont rol ler wi th integrated 800V
|
Infineon Technologies A...
|
